Semiconductor Crystals

Silicon-On-Insulator wafer SOI which is silicon on an insulating substrate (Si + SiO2 + Si), and a buried oxide layer is introduced between the top silicon and the back substrate.

Indium phosphide InP single crystal material is used as one of the most important compound semiconductor material. It is used to produce optical communications material of InP-based laser diode (LD), it is the key materials of Light emitting diode (LED) and photodetector, These devices realized message transmit , dissemination, amplification, reception and other functions in fiber-optic communications. 

Gallium oxide (Ga2O3) single crystal is a wide-bandgap semiconductor material.  Gallium oxide (Ga2O3) has broad application prospects in optoelectronic devices, it used as an insulating layer for Ga-based semiconductor materials, and as an ultraviolet filter.

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Form

CRY-Ga2O3

Gallium oxide (Ga2O3) single crystal 

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CRY-InP-S

Indium phosphide InP-S doped Single Crystal

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CRY-InP-Te

Indium phosphide InP-Te doped Single Crystal

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CRY-InP-Undoped

Indium phosphide InP Undoped Single Crystal

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CRY-InP-Zn

Indium phosphide InP-Zn doped Single Crystal

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CRY-SOI

Silicon-On-Insulator (SOI) wafer

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