Group II-VI

Cadmium Telluride, CdTe substrate is an important II-VI group compound semiconductor material, and its crystal structure is sphalerite. With a direct transition energy band structure.

Cadmium sulphide CdS has a photovoltaic effect and can be used to make a solar cell. Due to its special electrical, optical, semiconductor and optoelectronic properties, the CdS substrate has received extensive attention. 

Gallium arsenide (GaAs) crystal has good chemical stability, High hardness, resistance to harsh environment capability, It  has a good permeability in 2μm-14μm spectral range, Widely used in thermal infrared imaging systems, high-power CO2 laser optical system and FLIR systems.

Zinc oxide (ZnO) is a good GaN films substrate material, has 60mev exciton binding energy and 3.73ev bandwidth at room temperature, making it be the UV and visible light-emitting materials.




Cadmium sulphide Single Crystal Substrate


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Cadmium Telluride Single Crystal Substrate


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Gallium arsenide (GaAs) crystal

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Zinc oxide ZnO substrate

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