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GaN film on Sapphire wafer<\/h2>\r\n\t\t\t\t\t

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Type\/Dopant<\/th>More specs<\/th>GaN film thickness<\/th>\r\n\t\t\t\t\t\t\t\t<\/tr>\r\n\t\t\t\t\t\t\t\t<\/thead>\r\n\t\t\t\t\t\t\t\t
N-type\/undoped<\/b><\/td>Orientation:<0001> \/-0.5degree
Diameter: 50.8 \/-0.1mm
Dislocation density: less than 5x10E8cm-2
Useable surface area: > 90%
Surface: SSP\/DSP
Resistivity: < 0.5 ohm-cm<\/td>
4um~30 um<\/span><\/td><\/tr>
N-type\/Si<\/b><\/td>Orientation:<0001> \/-0.5degree
Diameter: 50.8 \/-0.1mm
Dislocation density: less than 5x10E8cm-2
Useable surface area: > 90%
Surface: SSP\/DSP
Resistivity: < 0.05 ohm-cm<\/td>
4um~30 um<\/span><\/td><\/tr>
P-type\/Mg<\/b><\/td>Orientation:<0001> \/-0.5degree
Diameter: 50.8 \/-0.1mm
Dislocation density: less than 5x10E8cm-2
Useable surface area: > 90%
Surface: SSP\/DSP
Resistivity: ~ 10 ohm-cm<\/td>
4um<\/span><\/td><\/tr>
N-type\/undoped<\/b><\/td>Orientation:<0001> \/-0.5degree
Diameter: 100 \/-0.1mm
Dislocation density: less than 5x10E8cm-2
Useable surface area: > 90%
Surface: SSP\/DSP
Resistivity: < 0.5 ohm-cm<\/td>
4um~30 um<\/span><\/td><\/tr>\r\n\t\t\t\t\t\t\t\t<\/tbody>\r\n\t\t\t\t\t\t\t<\/table>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t
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