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InP wafer<\/h2>\r\n\t\t\t\t\t

<\/p>\r\n\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t
Item<\/th>Type\/Dopant<\/th>Orientation<\/th>More Specs<\/th>Surface\r\n<\/th>\r\n\t\t\t\t\t\t\t\t<\/tr>\r\n\t\t\t\t\t\t\t\t<\/thead>\r\n\t\t\t\t\t\t\t\t
InP wafer<\/b><\/td>P-type\/Zn<\/span><\/td><100> \/-0.5degree<\/span><\/td>Growth\u00a0Method:LEC
Size:\u00a0dia50.8\u00a0x\u00a00.5\u00a0mm
Carrier\u00a0concentration:(1-4)\u00a0x\u00a01018\u00a0cm-3
Mobility:\u00a0>50-60\u00a0cm2\/V.s
EPD:<=\u00a010000\u00a0cm-2
Major\u00a0flat\u00a0orientation:<110>\/<1-10>
<\/td>
SSP\/DSP<\/span><\/td><\/tr>
InP wafer<\/b><\/td>N-type\/S<\/span><\/td><100> \/-0.5degree<\/span><\/td>Growth\u00a0Method:LEC
Size:\u00a0dia50.8\u00a0x\u00a00.5\u00a0mm
Carrier\u00a0concentration:(1-4)\u00a0x\u00a01018\u00a0cm-3
Mobility:\u00a0>50-60\u00a0cm2\/V.s
EPD:<=\u00a010000\u00a0cm-2
Major\u00a0flat\u00a0orientation:<110>\/<1-10>
<\/td>
SSP\/DSP<\/span><\/td><\/tr>
InP wafer<\/b><\/td>N-type\/Fe<\/span><\/td><100> \/-0.5degree<\/span><\/td>Growth\u00a0Method:LEC
Size:\u00a0dia50.8\u00a0x\u00a00.5\u00a0mm
Carrier\u00a0concentration:(1-4)\u00a0x\u00a01018\u00a0cm-3
Mobility:\u00a0>50-60\u00a0cm2\/V.s
EPD:<=\u00a010000\u00a0cm-2
Major\u00a0flat\u00a0orientation:<110>\/<1-10>
<\/td>
SSP\/DSP<\/span><\/td><\/tr>
InP wafer<\/b><\/td>SEMI-insulating<\/span><\/td><100> \/-0.5degree<\/span><\/td>Growth\u00a0Method:LEC
Size:\u00a0dia50.8\u00a0x\u00a00.5\u00a0mm
Carrier\u00a0concentration:(1-4)\u00a0x\u00a01018\u00a0cm-3
Mobility:\u00a0>50-60\u00a0cm2\/V.s
EPD:<=\u00a010000\u00a0cm-2
Major\u00a0flat\u00a0orientation:<110>\/<1-10>
<\/td>
SSP\/DSP<\/span><\/td><\/tr>\r\n\t\t\t\t\t\t\t\t<\/tbody>\r\n\t\t\t\t\t\t\t<\/table>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t
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