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2 inch diameter Silicon Carbide (SiC)<\/sub> Substrate<\/h2>\r\n\t\t\t\t\t

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Grade<\/th>Production Grade<\/b><\/td>Research Grade<\/b><\/td>Dummy Grade<\/b><\/td><\/tr>
Diameter<\/th>50.8 mm\u00b10.38 mm (2.000\u2033\u00b10.015\u2033)<\/td><\/tr>
Thickness<\/th>330\/430 \u03bcm\u00b125\u03bcm<\/td><\/tr>
Wafer Orientation<\/th>On axis : <0001>\u00b10.5\u00b0 Off axis : 1.0\u00b0\/3.5\u00b0\/4.0\/8.0 toward \u00b10.5\u00b0<\/td><\/tr>
Primary Flat<\/th>{10-10}\u00b15.0\u00b0<\/td><\/tr>
Primary Flat Length<\/th>15.88 mm\u00b11.65 mm (0.625\u2033\u00b10.065\u2033)<\/td><\/tr>
Secondary Flat Length<\/th>8.0 mm\u00b11.65 mm (0.315\u2033\u00b10.065\u2033)<\/td><\/tr>
Secondary Flat Orientation<\/th>Si-face:90\u00b0 cw. from orientation flat \u00b1 5\u00b0\/C-face:90\u00b0 ccw. from orientation flat \u00b1 5\u00b0<\/td><\/tr>
Edge exclusion<\/th>1 mm<\/td><\/tr>
TTV\/Bow \/Warp<\/th>\u226425\u03bcm \/\u226425\u03bcm \/\u226425\u03bcm<\/td><\/tr>
Resistivity<\/th>
Roughness<\/th>N\/A
N\/A<\/td><\/tr>
Cracks by high intensity light<\/th>Edge<1mm<\/td>Edge1-2mm<\/td>Cumulative length\u226410mm; single length\u22642mm<\/td><\/tr>
Hex Plants by high intensity light<\/th>2 allowed \u2264100 microns each<\/td>5 allowed \u2264300 microns each<\/td>Cumulative area\u226430%<\/td><\/tr>
Polytype Areas by high intensity light<\/th>None<\/td>Cumulative area\u22642 %<\/td>Cumulative area\u22645%<\/td><\/tr>
Scratches by high intensity light<\/th>None<\/td>None<\/td>3 scratches to 1\u00d7wafer diameter cumulative length<\/td><\/tr>
Contamination by high intensity light<\/th>None<\/td>None<\/td>None<\/td><\/tr>
Usable area<\/th>\u226590%<\/td>\u226580%<\/td>\u226570%<\/td><\/tr>\r\n\t\t\t\t\t\t\t\t<\/tbody>\r\n\t\t\t\t\t\t\t<\/table>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t
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